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vishay semiconductors vlm.33.. document number 81336 rev. 1.1, 22-feb-11 www.vishay.com 1 for technical support, please contact: led@vishay.com power smd led plcc-2 description the vlm.33.. series is an advanced modification of the vishay vlm.33.. series. it is designed to incorporate larger chips, therefore, capable of withstanding a 50 ma drive current. the package of the vlm.33.. is the plcc-2. it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. features ? utilizing (as) alingap technology ? available in 8 mm tape ? luminous intensity and color categorized per packing unit ? luminous intensity ratio per packing unit i vmax. /i vmin. ? 1.6 ? thermal resistance r = 400 k/w ? esd-withstand voltage: up to 2 kv according to jesd22-a114-b ? preconditioning: a cc. to jedec level 2a ? compatible with reflow, vapor phase and wave solder processes according to cecc 00802 and j-std-020 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? aec-q101 qualified 19225 product group and package data ? product group: led ? product series: smd power ? package: plcc-2 ? angle of half intensity: 60 applications ? traffic signals and signs ? interior and exterior lighting ? dashboard illumination ? indicator and backlighting purposes for audio, video, lcds switches, symbols, illuminated advertising etc. parts table part color, luminous intensity technology vlmr33t1u2-gs08 amber, i v = (280 to 710) mcd alingap on gaas vlmr33t1u2-gs18 amber, i v = (280 to 710) mcd alingap on gaas vlmr33r2u2-gs08 amber, i v = (140 to 710) mcd alingap on gaas vlmr33r2u2-gs18 amber, i v = (140 to 710) mcd alingap on gaas vlms33s1t2-gs08 super red, i v = (180 to 450) mcd alingap on gaas vlms33s1t2-gs18 super red, i v = (180 to 450) mcd alingap on gaas vlms33s1u1-gs08 super red, i v = (180 to 560) mcd alingap on gaas vlms33s1u1-gs18 super red, i v = (180 to 560) mcd alingap on gaas vlmo33s1t2-gs08 soft orange, i v = (180 to 450) mcd alingap on gaas VLMO33S1T2-GS18 soft orange, i v = (180 to 450) mcd alingap on gaas vlmo33t1u2-gs08 soft orange, i v = (280 to 710) mcd alingap on gaas vlmo33t1u2-gs18 soft orange, i v = (280 to 710) mcd alingap on gaas ** please see document ?vishay material category policy?: www.vishay.com/doc?99902
www.vishay.com 2 document number 81336 rev. 1.1, 22-feb-11 vishay semiconductors vlm.33.. for technical support, please contact: led@vishay.com note: 1) driving the led in revers e direction is suitable for a short term application vlmo33r2u2-gs08 soft orange, i v = (140 to 710) mcd alingap on gaas vlmo33r2u2-gs18 soft orange, i v = (140 to 710) mcd alingap on gaas vlmy33t1u2-gs08 ye l l o w, i v = (280 to 710) mcd alingap on gaas vlmy33t1u2-gs18 ye l l o w, i v = (280 to 710) mcd alingap on gaas vlmy33r2u2-gs08 ye l l o w, i v = (140 to 710) mcd alingap on gaas vlmy33r2u2-gs18 ye l l o w, i v = (140 to 710) mcd alingap on gaas absolute maximum ratings (t amb = 25 c, unless otherwise specified) vlm.33.. parameter test condition symbol value unit reverse voltage 1) v r 5v dc forward current t amb ? 73 c (400 k/w) i f 50 ma power dissipation p v 130 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w optical and electrical characteristics (t amb = 25 c, unless otherwise specified) vlmr33.., amber parameter test condition part symbol min typ. max unit luminous intensity i f = 30 ma vlmr33t1u2 i v 280 710 mcd vlmr33r2u2 i v 140 710 mcd luminous flux/luminous intensity ? v /i v 3mlm/mcd dominant wavelength i f = 30 ma ? d 611 617 622 nm peak wavelength i f = 30 ma ? p 624 nm spectral bandwidth at 50 % i rel max i f = 30 ma ?? 18 nm angle of half intensity i f = 30 ma ? 60 deg forward voltage i f = 30 ma v f 1.722.5v reverse current v r = 5 v i r 0.01 10 a parts table part color, luminous intensity technology
document number 81336 rev. 1.1, 22-feb-11 www.vishay.com 3 vishay semiconductors vlm.33.. for technical support, please contact: led@vishay.com optical and electrical characteristics (t amb = 25 c, unless otherwise specified) vlms33.., super red parameter test condition part symbol min. typ. max. unit luminous intensity i f = 30 ma vlms33s1t2 i v 180 450 mcd vlms33s1u1 i v 180 560 mcd luminous flux/luminous intensity ? v /i v 3mlm/mcd dominant wavelength i f = 30 ma ? d 626 630 638 nm peak wavelength i f = 30 ma ? p 641 nm spectral bandwidth at 50 % i rel max i f = 30 ma ?? 17 nm angle of half intensity i f = 30 ma ? 60 deg forward voltage i f = 30 ma v f 1.722.5v reverse current v r = 5 v i r 0.01 10 a optical and electrical characteristics (t amb = 25 c, unless otherwise specified) vlmo33.., soft orange parameter test condition part symbol min. typ. max. unit luminous intensity i f = 30 ma vlmo33s1t2 i v 180 450 mcd vlmo33t1u2 i v 280 710 mcd vlmo33r2u2 i v 140 710 mcd luminous flux/luminous intensity ? v /i v 3mlm/mcd dominant wavelength i f = 30 ma ? d 600 605 611 nm peak wavelength i f = 30 ma ? p 611 nm spectral bandwidth at 50 % i rel max i f = 30 ma ?? 17 nm angle of half intensity i f = 30 ma ? 60 deg forward voltage i f = 30 ma v f 1.7 2 2.5 v reverse current v r = 5 v i r 0.01 10 a optical and electrical characteristics (t amb = 25 c, unless otherwise specified) vlmy33.., yellow parameter test condition part symbol min. typ. max. unit luminous intensity i f = 30 ma vlmy33t1u2 i v 280 710 mcd vlmy33r2u2 i v 140 710 mcd luminous flux/luminous intensity ? v /i v 3mlm/mcd dominant wavelength i f = 30 ma ? d 583 588 594 nm peak wavelength i f = 30 ma ? p 590 nm spectral bandwidth at 50 % i rel max i f = 30 ma ?? 18 nm angle of half intensity i f = 30 ma ? 60 deg forward voltage i f = 30 ma v f 1.7 2 2.5 v reverse current v r = 5 v i r 0.01 10 a
www.vishay.com 4 document number 81336 rev. 1.1, 22-feb-11 vishay semiconductors vlm.33.. for technical support, please contact: led@vishay.com note: wavelengths are tested at a current pulse duration of 25 ms. note: luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. the above type numbers represent the order groups which include only a few brightness groups. only one group will be shipped on each reel (there will be no mixi ng of two groups on each reel). in order to ensure avai lability, single brightnes s groups will not be orderable. in a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. in order to ensure availability, single wavelength groups will not be orderable. color classification group dominant wavelength (nm) amber soft orange yellow min. max. min. max. min. max. 1 611 618 598 601 581 584 2 614 622 600 603 583 586 3 602 605 585 588 4 604 607 587 590 5 606 609 589 592 6 608 611 591 594 luminous intensity classification group luminous intensity (mcd) standard optional min. max. p 1 45 56 2 56 71 q 1 71 90 2 90 112 r 1 112 140 2 140 180 s 1 180 224 2 224 280 t 1 280 355 2 355 450 u 1 450 560 2 560 710 crossing table vishay osram vlms33s1t2 lst67b-s1t2 vlms33s1u1 lst67b-t1u1
document number 81336 rev. 1.1, 22-feb-11 www.vishay.com 5 vishay semiconductors vlm.33.. for technical support, please contact: led@vishay.com typical characteristics (t amb = 25 c, unless otherwise specified) figure 1. forward current vs. ambient temperature figure 2. forward current vs. pulse length figure 3. rel. luminous intensity vs. angular displacement 0 10 20 30 40 50 60 70 8 0 90 100 0 25 50 75 100 125 167 8 4 r thja = 400 k/ w i f - max. permissi b le for w ard c u rrent (ma) t am b - am b ient temperat u re (c) 0.00 0.02 0.04 0.06 0.0 8 0.10 0.12 t p - p u lse length (s) i f - for w ard c u rrent (a) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 t p /t = 0.005 0.05 0.5 17044 0.4 0.2 0 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity ? - ang u lar displacement figure 4. forward current vs. forward voltage figure 5. relative intensity vs. wavelength figure 6. relative luminous intensity vs. forward current 0 10 20 30 40 50 60 70 8 0 90 100 1.5 1.6 1.7 1. 8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 v f - for w ard v oltage ( v ) 20144 i f - for w ard c u rrent (ma) yello w soft orange am b er s u per red 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 570 5 8 0 590 600 610 620 630 640 650 660 670 - w a v elength (nm) 20196 i v rel - relati v e l u mino u s intensity am b er 0.01 0.1 1 10 1 10 100 i f - for w ard c u rrent (ma) i v rel - relati v e l u mino u s intensity s u per red 20143 am b er yello w soft orange
www.vishay.com 6 document number 81336 rev. 1.1, 22-feb-11 vishay semiconductors vlm.33.. for technical support, please contact: led@vishay.com figure 7. relative luminous intensity vs. amb. temperature figure 8. change of dominant wavelength vs. ambient temperature figure 9. change of forward voltage vs. ambient temperature 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 20197 i v rel -relati v e l u mino u s intensity am b er - 6 - 4 - 2 0 2 4 6 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 20199 - change of dom. w a v elength (nm) d am b er - 200 - 150 - 100 - 50 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 20200 v f - change of for w ard v oltage (m v ) 10 ma 30 ma 50 ma am b er figure 10. relative intensity vs. wavelength figure 11. relative luminous in tensity vs. amb. temperature figure 12. change of dominant wavelength vs. forward current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 600 610 620 630 640 650 660 670 6 8 0 690 700 2019 8 i v rel - relati v e l u mino u s intensity s u per red - w a v elength (nm) 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 20201 i v rel - relati v e l u mino u s intensity s u per red - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 8 0 90 100 20202 i f - for w ard c u rrent (ma) s u per red - change of dom. w a v elength (nm) ? d
document number 81336 rev. 1.1, 22-feb-11 www.vishay.com 7 vishay semiconductors vlm.33.. for technical support, please contact: led@vishay.com figure 13. change of dominant wavelength vs. ambient temperature figure 14. change of forward voltage vs. ambient temperature figure 15. relative intensity vs. wavelength - 5 - 4 - 3 - 2 - 1 0 1 2 3 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 20203 - change of dom. w a v elength (nm) ? d s u per red t am b - am b ient temperat u re (c) v f - change of for w ard v oltage (m v ) 17039 30 ma 10 ma 50 ma - 200 - 150 - 100 - 50 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 s u per red 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 560 5 8 0 600 620 640 660 16314 soft orange i v rel - relati v e l u mino u s intensity - w a v elength (nm) figure 16. relative luminous in tensity vs. amb. temperature figure 17. change of dominant wavelength vs. ambient temperature figure 18. change of forward voltage vs. ambient temperature 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17021 i v rel - relati v e l u mino u s intensity soft orange - 6 - 4 - 2 0 2 4 6 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17022 - change of dom. w a v elength (nm) d soft orange - 200 - 150 - 100 - 50 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17020 v - change of for w ard v oltage (m v ) f 10 ma 30 ma 50 ma soft orange
www.vishay.com 8 document number 81336 rev. 1.1, 22-feb-11 vishay semiconductors vlm.33.. for technical support, please contact: led@vishay.com package dimensions in millimeters figure 19. relative intensity vs. wavelength figure 20. relative luminous intensity vs. amb. temperature 0 0.2 0.4 0.6 0. 8 1.0 1.2 540 560 5 8 0 600 620 640 - w a v elength (nm) 1600 8 i v rel. - relati v e l u mino u s intensity yello w 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17016 i v rel - relati v e l u mino u s intensity yello w figure 21. change of dominant wavelength vs. ambient temperature figure 22. change of forward vo ltage vs. ambient temperature - 6 - 4 - 2 0 2 4 6 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17017 ? d - change of dom. w a v elength (nm) yello w - 200 - 150 - 100 - 50 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 t am b - am b ient temperat u re (c) 17015 v f - change of for w ard v oltage (m v ) 10 ma 30 ma 50 ma yello w 20541 mounting pad layout 1.2 2.6 (2. 8 ) 1.6 (1.9) 4 4 area co v ered w ith solder resist 3.5 0.2 3 + 0.15 1.75 0.1 0.9 2. 8 0.15 ca pin identification 2.2 ? 2.4 technical dra w ings according to di n specifications dra w ing- n o.: 6.541-5067.01-4 iss u e: 5; 04.11.0 8
document number 81336 rev. 1.1, 22-feb-11 www.vishay.com 9 vishay semiconductors vlm.33.. for technical support, please contact: led@vishay.com method of taping/polarity and tape and reel smd led (vlm3 - series) vishay?s leds in smd pack ages are available in an antistatic 8 mm blister tape (in accordance with din iec 40 (co) 564) for automatic component insertion. the blister tape is a plastic strip with impressed component cavities, covered by a top tape. taping of vlm.3.. reel package dimension in millimeters for smd leds, tape option gs08 (= 1500 pcs.) reel package dimension in millimeters for smd leds, tape option gs18 (= 8000 pcs.) preferred figure 23. tape dimensions in mm for plcc-2 adhesi v e tape component ca v ity blister tape 94 8 670 1. 8 5 1.65 4.0 3.6 3.6 3.4 2.05 1.95 1.6 1.4 4.1 3.9 4.1 3.9 5.75 5.25 8 .3 7.7 3.5 3.1 2.2 2.0 0.25 94 8 66 8 figure 24. reel dimensions - gs08 figure 25. reel dimensions - gs18 1 8 0 17 8 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 14.4 max. 10.0 9.0 120 94 8 665 identification la b el: v ishay type gro u p tape code prod u ction code qu antity 321 329 identification 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 14.4 max. 10.4 8 .4 120 1 88 57 la b el: v ishay type gro u p tape code prod u ction code qu antity
www.vishay.com 10 document number 81336 rev. 1.1, 22-feb-11 vishay semiconductors vlm.33.. for technical support, please contact: led@vishay.com soldering profile bar code product label example: a) type of component b) manufacturing plant c) sel - selection code (bin): e.g.: r2 = code for luminous intensity group 3 = code for color group d date code year/week e) day code (e.g. 1: monday) f) batch no. g) total quantity h) company code figure 26. vishay lead (pb)-fr ee reflow soldering profile (acc. to j-std-020) figure 27. double wave soldering of opto devices (all packages) 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 88 5 ir reflo w soldering profile for lead (p b )-free soldering preconditioning acc. to jedec le v el 2a max. 2 cycles allo w ed 255 c 235 c to 260 c 2 k/s ca. 200 k/s second w a v e first w a v e 5 s f u ll line: typical dotted line: process limits time (s) temperat u re (c) lead temperat u re 300 250 200 150 100 50 0 0 50 100 150 200 250 94 8 626-1 tt w soldering (acc. to cecc00 8 02) 100 c to 130 c forced cooling ca. 2 k/s ca. 5 k/s 106 37 v ishay a h bc d e f g 20195
document number 81336 rev. 1.1, 22-feb-11 www.vishay.com 11 vishay semiconductors vlm.33.. for technical support, please contact: led@vishay.com dry packing the reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. final packing the sealed reel is packed into a cardboard box. a secondary cardboard box is used for shipping purposes. recommended method of storage dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. the following conditions should be observed, if dry boxes are not available: ? storage temperature 10 c to 30 c ? storage humidity ? 60 % rh max. after more than 672 h under these conditions moisture content will be too high for reflow soldering. in case of moisture absorp tion, the devices will recover to the former condition by drying under the following condition: 192 h at 40 c + 5 c/- 0 c and < 5 % rh (dry air/nitrogen) or 96 h at 60 c + 5 c and < 5 % rh for all device containers or 24 h at 100 c + 5 c not suitable for reel or tubes. an eia jedec standard jesd22-a112 level 2a label is included on all dry bags. example of jesd22-a112 level 2a label esd precaution proper storage and handling procedures should be followed to prevent esd damage to the devices especially when they are removed from the antistatic shielding bag. electro-static sensitive devices warning labels are on the packaging. vishay semiconductors standard bar code labels the vishay semiconductors standard bar-code labels are printed at final packing areas. the labels are on each packing unit and contain vishay semiconductors specific data. al u min u m b ag la b el reel 15973 l e v e l caution this bag contains moisture ? sensitive devices 1. shelf life in sealed bag 12 months at <40c and < 90% relative humidity (rh) 2. after this bag is opened devices that will be subjected to infrared reflow, vapor - phase reflow, or equivalent processing (peak package body temp. 260c) must be: a) mounted within 672 hours at factory condition of < 30c/60%rh or b) stored at <1 0% rh. 3. devices require baking before mounting if: a) humidity indicator card is >10% when read at 23c + 5c or b) 2a or 2b is not met. 4. if baking is required, devices may be baked for: 192 hours at 40c + 5c/ - 0c and <5%rh (dry air/nitrogen) or 96 hours at 605 o cand <5%rh for all device containers or 24 hours at 1005c not suitable for reels or tubes bag seal date: ______________________________ (if blank, see bar code label) note: level defined by eia jedec standard jesd22 - a113 2a 197 8 6
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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